SiHB12N60E-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SiHB12N60E-GE3-VB is a SiHB12N60E-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 430mΩ@10V 3.5V 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 430mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.6 grams.

More on SiHB12N60E-GE3-VB

Full Specifications of SiHB12N60E-GE3-VB

Model NumberSiHB12N60E-GE3-VB
Model NameVBsemi Elec SiHB12N60E-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description650V 430mΩ@10V 3.5V 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.600 grams / 0.056438 oz
Package / CaseTO-263
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Drain Source On Resistance (RDS(on)@Vgs,Id)430mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V
Type1PCSNChannel

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