SIR418DP-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SIR418DP-T1-GE3-VB is a SIR418DP-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 4.7mΩ@10V 1.9V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS. This product comes in a DFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.9V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.245 grams.

More on SIR418DP-T1-GE3-VB

Full Specifications of SIR418DP-T1-GE3-VB

Model NumberSIR418DP-T1-GE3-VB
Model NameVBsemi Elec SIR418DP-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 4.7mΩ@10V 1.9V 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.245 grams / 0.008642 oz
Package / CaseDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Drain Source On Resistance (RDS(on)@Vgs,Id)4.7mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)1.9V
Type1PCSNChannel

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