VBsemi Elec SIR802DP-T1-GE3-VB is a SIR802DP-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS. This product comes in a PDFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 100A
- Power Dissipation (Pd): 250W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@10V,32A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.015 grams.
More on SIR802DP-T1-GE3-VB
Full Specifications of SIR802DP-T1-GE3-VB
Model Number | SIR802DP-T1-GE3-VB |
Model Name | VBsemi Elec SIR802DP-T1-GE3-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.015 grams / 0.000529 oz |
Package / Case | PDFN-8(5x6) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 100A |
Power Dissipation (Pd) | 250W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8mΩ@10V,32A |
Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
Type | 1PCSNChannel |
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