SIR802DP-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SIR802DP-T1-GE3-VB is a SIR802DP-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS. This product comes in a PDFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8mΩ@10V,32A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.015 grams.

More on SIR802DP-T1-GE3-VB

Full Specifications of SIR802DP-T1-GE3-VB

Model NumberSIR802DP-T1-GE3-VB
Model NameVBsemi Elec SIR802DP-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 100A 250W 1.8mΩ@10V,32A 2.5V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.015 grams / 0.000529 oz
Package / CasePDFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.8mΩ@10V,32A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel

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