SM2A18NSV-VB by VBsemi Elec – Specifications

VBsemi Elec SM2A18NSV-VB is a SM2A18NSV-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 1A 3.1W 1.2Ω@10V,580mA 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 1A
  • Power Dissipation (Pd): 3.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,580mA
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.203 grams.

Full Specifications of SM2A18NSV-VB

Model NumberSM2A18NSV-VB
Model NameVBsemi Elec SM2A18NSV-VB
CategoryMOSFETs
BrandVBsemi Elec
Description200V 1A 3.1W 1.2Ω@10V,580mA 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.203 grams / 0.007161 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)1A
Power Dissipation (Pd)3.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2Ω@10V,580mA
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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