VBsemi Elec SM2A18NSV-VB is a SM2A18NSV-VB from VBsemi Elec, part of the MOSFETs. It is designed for 200V 1A 3.1W 1.2Ω@10V,580mA 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 1A
- Power Dissipation (Pd): 3.1W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@10V,580mA
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.203 grams.
More on SM2A18NSV-VB
Full Specifications of SM2A18NSV-VB
| Model Number | SM2A18NSV-VB |
| Model Name | VBsemi Elec SM2A18NSV-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 1A 3.1W 1.2Ω@10V,580mA 4V@250uA 1PCSNChannel SOT-223-4 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.203 grams / 0.007161 oz |
| Package / Case | SOT-223-4 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 1A |
| Power Dissipation (Pd) | 3.1W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.2Ω@10V,580mA |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |