VBsemi Elec SP8K1TB-VB is a SP8K1TB-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 6.8A 2.7W 22mΩ@10V,5A 2.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 6.8A
- Power Dissipation (Pd): 2.7W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 22mΩ@10V,5A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 2 N-Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.139 grams.
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Full Specifications of SP8K1TB-VB
| Model Number | SP8K1TB-VB |
| Model Name | VBsemi Elec SP8K1TB-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 6.8A 2.7W 22mΩ@10V,5A 2.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.139 grams / 0.004903 oz |
| Package / Case | SO-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 6.8A |
| Power Dissipation (Pd) | 2.7W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 22mΩ@10V,5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 2 N-Channel |