SPU04N60C3-VB by VBsemi Elec – Specifications

VBsemi Elec SPU04N60C3-VB is a SPU04N60C3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 4.5A 60W 2.1Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 4.5A
  • Power Dissipation (Pd): 60W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1Ω@10V,3.1A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.66 grams.

Full Specifications of SPU04N60C3-VB

Model NumberSPU04N60C3-VB
Model NameVBsemi Elec SPU04N60C3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description650V 4.5A 60W 2.1Ω@10V,3.1A 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.660 grams / 0.023281 oz
Package / CaseTO-251
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)4.5A
Power Dissipation (Pd)60W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.1Ω@10V,3.1A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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