SQ9945BEY-T1-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SQ9945BEY-T1-GE3-VB is a SQ9945BEY-T1-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 60V 7A 4W 28mΩ@10V,4.5A 2.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS. This product comes in a SOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 7A
  • Power Dissipation (Pd): 4W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@10V,4.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.134 grams.

More on SQ9945BEY-T1-GE3-VB

Full Specifications of SQ9945BEY-T1-GE3-VB

Model NumberSQ9945BEY-T1-GE3-VB
Model NameVBsemi Elec SQ9945BEY-T1-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description60V 7A 4W 28mΩ@10V,4.5A 2.5V@250uA 2 N-Channel SOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.134 grams / 0.004727 oz
Package / CaseSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)7A
Power Dissipation (Pd)4W
Drain Source On Resistance (RDS(on)@Vgs,Id)28mΩ@10V,4.5A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type2 N-Channel

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