SQD50P04-09L-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SQD50P04-09L-GE3-VB is a SQD50P04-09L-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 10mΩ@10V 1.6V 1PCSPChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

More on SQD50P04-09L-GE3-VB

Full Specifications of SQD50P04-09L-GE3-VB

Model NumberSQD50P04-09L-GE3-VB
Model NameVBsemi Elec SQD50P04-09L-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 10mΩ@10V 1.6V 1PCSPChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)1.6V
Type1PCSPChannel

Compare VBsemi Elec - SQD50P04-09L-GE3-VB With Other 200 Models

Related Models - SQD50P04-09L-GE3-VB Alternative

Scroll to Top