STB100NF04-VB by VBsemi Elec – Specifications

VBsemi Elec STB100NF04-VB is a STB100NF04-VB from VBsemi Elec, part of the MOSFETs. It is designed for 40V 100A 150W 5mΩ@10V,30A 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.2 grams.

Full Specifications of STB100NF04-VB

Model NumberSTB100NF04-VB
Model NameVBsemi Elec STB100NF04-VB
CategoryMOSFETs
BrandVBsemi Elec
Description40V 100A 150W 5mΩ@10V,30A 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.200 grams / 0.077603 oz
Package / CaseTO-263-2
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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