VBsemi Elec STD2NB60T4-VB is a STD2NB60T4-VB from VBsemi Elec, part of the MOSFETs. It is designed for 650V 4.5A 1.8Ω@10V,4.5A 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4.5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.8Ω@10V,4.5A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.38 grams.
More on STD2NB60T4-VB
Full Specifications of STD2NB60T4-VB
Model Number | STD2NB60T4-VB |
Model Name | VBsemi Elec STD2NB60T4-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 650V 4.5A 1.8Ω@10V,4.5A 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.380 grams / 0.013404 oz |
Package / Case | TO-252-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 4.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8Ω@10V,4.5A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
Compare VBsemi Elec - STD2NB60T4-VB With Other 200 Models
- STD2NB60T4-VB vs SI3430DV-VB
- STD2NB60T4-VB vs SI4401BDY-T1-VB
- STD2NB60T4-VB vs SI4410DY-T1-VB
- STD2NB60T4-VB vs SI4463BDY-T1-VB
- STD2NB60T4-VB vs Si4463CDY-VB
- STD2NB60T4-VB vs SM2300NSAC-VB
- STD2NB60T4-VB vs SM4305PSKC-VB
- STD2NB60T4-VB vs SM6018NSU-VB
- STD2NB60T4-VB vs SMG2339P-VB
- STD2NB60T4-VB vs SP8K1TB-VB