VBsemi Elec SUB85N03-07P-VB is a SUB85N03-07P-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 98A 3.8mΩ@10V,98A 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 98A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V,98A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.24 grams.
More on SUB85N03-07P-VB
Full Specifications of SUB85N03-07P-VB
Model Number | SUB85N03-07P-VB |
Model Name | VBsemi Elec SUB85N03-07P-VB |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 30V 98A 3.8mΩ@10V,98A 1PCSNChannel TO-263 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.240 grams / 0.079014 oz |
Package / Case | TO-263 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 30V |
Continuous Drain Current (Id) | 98A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.8mΩ@10V,98A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |
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