SUD50N03-09P-GE3-VB by VBsemi Elec – Specifications

VBsemi Elec SUD50N03-09P-GE3-VB is a SUD50N03-09P-GE3-VB from VBsemi Elec, part of the MOSFETs. It is designed for 30V 10mΩ@10V 1.6V 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.505 grams.

More on SUD50N03-09P-GE3-VB

Full Specifications of SUD50N03-09P-GE3-VB

Model NumberSUD50N03-09P-GE3-VB
Model NameVBsemi Elec SUD50N03-09P-GE3-VB
CategoryMOSFETs
BrandVBsemi Elec
Description30V 10mΩ@10V 1.6V 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.505 grams / 0.017813 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V
Gate Threshold Voltage (Vgs(th)@Id)1.6V
Type1PCSNChannel

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