VBsemi Elec UTT80N10-VB is a UTT80N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 100A 8.5mΩ@10V,100A 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,100A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.77 grams.
More on UTT80N10-VB
Full Specifications of UTT80N10-VB
| Model Number | UTT80N10-VB |
| Model Name | VBsemi Elec UTT80N10-VB |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 100A 8.5mΩ@10V,100A 1PCSNChannel TO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.770 grams / 0.097709 oz |
| Package / Case | TO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8.5mΩ@10V,100A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |