UTT80N10-VB by VBsemi Elec – Specifications

VBsemi Elec UTT80N10-VB is a UTT80N10-VB from VBsemi Elec, part of the MOSFETs. It is designed for 100V 100A 8.5mΩ@10V,100A 1PCSNChannel TO-220AB-3 MOSFETs ROHS. This product comes in a TO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,100A
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.77 grams.

More on UTT80N10-VB

Full Specifications of UTT80N10-VB

Model NumberUTT80N10-VB
Model NameVBsemi Elec UTT80N10-VB
CategoryMOSFETs
BrandVBsemi Elec
Description100V 100A 8.5mΩ@10V,100A 1PCSNChannel TO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.770 grams / 0.097709 oz
Package / CaseTO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@10V,100A
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-

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