VBA1101M by VBsemi Elec – Specifications

VBsemi Elec VBA1101M is a VBA1101M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 4.2A 150mΩ@10V,2.7A 4.8W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 4.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@10V,2.7A
  • Power Dissipation (Pd): 4.8W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.626 grams.

Full Specifications of VBA1101M

Model NumberVBA1101M
Model NameVBsemi Elec VBA1101M
CategoryMOSFETs
BrandVBsemi Elec
Description100V 4.2A 150mΩ@10V,2.7A 4.8W 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.626 grams / 0.022082 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)4.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@10V,2.7A
Power Dissipation (Pd)4.8W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

Compare VBsemi Elec - VBA1101M With Other 200 Models

Related Models - VBA1101M Alternative

Scroll to Top