VBA1104N by VBsemi Elec – Specifications

VBsemi Elec VBA1104N is a VBA1104N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 6.4A 5.9W 40mΩ@10V,5A 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 6.4A
  • Power Dissipation (Pd): 5.9W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.502 grams.

Full Specifications of VBA1104N

Model NumberVBA1104N
Model NameVBsemi Elec VBA1104N
CategoryMOSFETs
BrandVBsemi Elec
Description100V 6.4A 5.9W 40mΩ@10V,5A 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.502 grams / 0.017708 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)6.4A
Power Dissipation (Pd)5.9W
Drain Source On Resistance (RDS(on)@Vgs,Id)40mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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