VBsemi Elec VBA1104N is a VBA1104N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 6.4A 5.9W 40mΩ@10V,5A 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 6.4A
- Power Dissipation (Pd): 5.9W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@10V,5A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.502 grams.
More on VBA1104N
Full Specifications of VBA1104N
| Model Number | VBA1104N |
| Model Name | VBsemi Elec VBA1104N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 6.4A 5.9W 40mΩ@10V,5A 3V@250uA 1PCSNChannel SO-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.502 grams / 0.017708 oz |
| Package / Case | SO-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 6.4A |
| Power Dissipation (Pd) | 5.9W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 40mΩ@10V,5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |