VBA1158N by VBsemi Elec – Specifications

VBsemi Elec VBA1158N is a VBA1158N from VBsemi Elec, part of the MOSFETs. It is designed for 150V 5.4A 5.9W 90mΩ@10V,5A 2.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 5.4A
  • Power Dissipation (Pd): 5.9W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@10V,5A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.1 grams.

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Full Specifications of VBA1158N

Model NumberVBA1158N
Model NameVBsemi Elec VBA1158N
CategoryMOSFETs
BrandVBsemi Elec
Description150V 5.4A 5.9W 90mΩ@10V,5A 2.5V@250uA 1PCSNChannel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.100 grams / 0.038801 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)5.4A
Power Dissipation (Pd)5.9W
Drain Source On Resistance (RDS(on)@Vgs,Id)90mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel

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