VBC6N2014 by VBsemi Elec – Specifications

VBsemi Elec VBC6N2014 is a VBC6N2014 from VBsemi Elec, part of the MOSFETs. It is designed for 20V 6.2A 20mΩ@4.5V,6.5A 1W 1.6V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Configuration: Common Drain
  • Continuous Drain Current (Id): 6.2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@4.5V,6.5A
  • Power Dissipation (Pd): 1W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Type: 2 N-Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.331 grams.

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Full Specifications of VBC6N2014

Model NumberVBC6N2014
Model NameVBsemi Elec VBC6N2014
CategoryMOSFETs
BrandVBsemi Elec
Description20V 6.2A 20mΩ@4.5V,6.5A 1W 1.6V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.331 grams / 0.011676 oz
Package / CaseTSSOP-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
ConfigurationCommon Drain
Continuous Drain Current (Id)6.2A
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@4.5V,6.5A
Power Dissipation (Pd)1W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Type2 N-Channel

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