VBsemi Elec VBC6N3010 is a VBC6N3010 from VBsemi Elec, part of the MOSFETs. It is designed for 30V 8.6A 1.6W 12mΩ@10V,8.5A 3V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS. This product comes in a TSSOP-8 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Configuration: Common Drain
- Continuous Drain Current (Id): 8.6A
- Power Dissipation (Pd): 1.6W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,8.5A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 2 N-Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.11 grams.
More on VBC6N3010
Full Specifications of VBC6N3010
| Model Number | VBC6N3010 |
| Model Name | VBsemi Elec VBC6N3010 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 8.6A 1.6W 12mΩ@10V,8.5A 3V@250uA 2 N-Channel TSSOP-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.110 grams / 0.074428 oz |
| Package / Case | TSSOP-8 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Configuration | Common Drain |
| Continuous Drain Current (Id) | 8.6A |
| Power Dissipation (Pd) | 1.6W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12mΩ@10V,8.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 2 N-Channel |