VBE1101M by VBsemi Elec – Specifications

VBsemi Elec VBE1101M is a VBE1101M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 15A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 114mΩ@10V,3A
  • Power Dissipation (Pd): 3W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.42 grams.

More on VBE1101M

Full Specifications of VBE1101M

Model NumberVBE1101M
Model NameVBsemi Elec VBE1101M
CategoryMOSFETs
BrandVBsemi Elec
Description100V 15A 114mΩ@10V,3A 3W 2.5V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.420 grams / 0.085363 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)15A
Drain Source On Resistance (RDS(on)@Vgs,Id)114mΩ@10V,3A
Power Dissipation (Pd)3W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel

Compare VBsemi Elec - VBE1101M With Other 200 Models

Related Models - VBE1101M Alternative

Scroll to Top