VBsemi Elec VBE1101N is a VBE1101N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 85A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,30A
- Power Dissipation (Pd): 3.25W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.46 grams.
More on VBE1101N
Full Specifications of VBE1101N
| Model Number | VBE1101N |
| Model Name | VBsemi Elec VBE1101N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 85A 10mΩ@10V,30A 3.25W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.460 grams / 0.086774 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 85A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,30A |
| Power Dissipation (Pd) | 3.25W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |