VBsemi Elec VBE1104N is a VBE1104N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 40A 34mΩ@10V,5A 3.75W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@10V,5A
- Power Dissipation (Pd): 3.75W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.799 grams.
More on VBE1104N
Full Specifications of VBE1104N
| Model Number | VBE1104N |
| Model Name | VBsemi Elec VBE1104N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 40A 34mΩ@10V,5A 3.75W 3V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.799 grams / 0.028184 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 40A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 34mΩ@10V,5A |
| Power Dissipation (Pd) | 3.75W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |