VBE1106N by VBsemi Elec – Specifications

VBsemi Elec VBE1106N is a VBE1106N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 62mΩ@4.5V,8A
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.886 grams.

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Full Specifications of VBE1106N

Model NumberVBE1106N
Model NameVBsemi Elec VBE1106N
CategoryMOSFETs
BrandVBsemi Elec
Description100V 25A 62mΩ@4.5V,8A 83W 1.6V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.886 grams / 0.031253 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)62mΩ@4.5V,8A
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)1.6V@250uA
Type1PCSNChannel

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