VBsemi Elec VBE1158N is a VBE1158N from VBsemi Elec, part of the MOSFETs. It is designed for 150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 15.5A
- Power Dissipation (Pd): 3.1W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 74mΩ@10V,5A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.44 grams.
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Full Specifications of VBE1158N
| Model Number | VBE1158N |
| Model Name | VBsemi Elec VBE1158N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 150V 15.5A 3.1W 74mΩ@10V,5A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.440 grams / 0.086069 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) | 15.5A |
| Power Dissipation (Pd) | 3.1W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 74mΩ@10V,5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |