VBsemi Elec VBE1201K is a VBE1201K from VBsemi Elec, part of the MOSFETs. It is designed for 200V 5A 850mΩ@10V,2.9A 2.5W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 5A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 850mΩ@10V,2.9A
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.97 grams.
More on VBE1201K
Full Specifications of VBE1201K
| Model Number | VBE1201K |
| Model Name | VBsemi Elec VBE1201K |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 5A 850mΩ@10V,2.9A 2.5W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.970 grams / 0.104764 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 850mΩ@10V,2.9A |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |