VBE1203M by VBsemi Elec – Specifications

VBsemi Elec VBE1203M is a VBE1203M from VBsemi Elec, part of the MOSFETs. It is designed for 200V 10A 245mΩ@10V,3A 96W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 245mΩ@10V,3A
  • Power Dissipation (Pd): 96W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.45 grams.

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Full Specifications of VBE1203M

Model NumberVBE1203M
Model NameVBsemi Elec VBE1203M
CategoryMOSFETs
BrandVBsemi Elec
Description200V 10A 245mΩ@10V,3A 96W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.450 grams / 0.086421 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)245mΩ@10V,3A
Power Dissipation (Pd)96W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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