VBsemi Elec VBE1206N is a VBE1206N from VBsemi Elec, part of the MOSFETs. It is designed for 200V 30A 55mΩ@10V,3A 96W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 55mΩ@10V,3A
- Power Dissipation (Pd): 96W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.32 grams.
More on VBE1206N
Full Specifications of VBE1206N
| Model Number | VBE1206N |
| Model Name | VBsemi Elec VBE1206N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 30A 55mΩ@10V,3A 96W 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.320 grams / 0.081836 oz |
| Package / Case | TO-252 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 30A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 55mΩ@10V,3A |
| Power Dissipation (Pd) | 96W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |