VBsemi Elec VBE2102M is a VBE2102M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 8.8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@4.5V,3.4A
- Power Dissipation (Pd): 32.1W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.604 grams.
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Full Specifications of VBE2102M
| Model Number | VBE2102M |
| Model Name | VBsemi Elec VBE2102M |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.604 grams / 0.021305 oz |
| Package / Case | TO-252-2 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 8.8A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 350mΩ@4.5V,3.4A |
| Power Dissipation (Pd) | 32.1W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSPChannel |