VBE2102M by VBsemi Elec – Specifications

VBsemi Elec VBE2102M is a VBE2102M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS. This product comes in a TO-252-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@4.5V,3.4A
  • Power Dissipation (Pd): 32.1W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.604 grams.

Full Specifications of VBE2102M

Model NumberVBE2102M
Model NameVBsemi Elec VBE2102M
CategoryMOSFETs
BrandVBsemi Elec
Description100V 8.8A 350mΩ@4.5V,3.4A 32.1W 2.5V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.604 grams / 0.021305 oz
Package / CaseTO-252-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)8.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)350mΩ@4.5V,3.4A
Power Dissipation (Pd)32.1W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel

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