VBsemi Elec VBE3310 is a VBE3310 from VBsemi Elec, part of the MOSFETs. It is designed for 30V 32A 9mΩ@10V,32A 2 N-Channel TO-252-4 MOSFETs ROHS. This product comes in a TO-252-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 32A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@10V,32A
- Type: 2 N-Channel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.257 grams.
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Full Specifications of VBE3310
| Model Number | VBE3310 |
| Model Name | VBsemi Elec VBE3310 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 32A 9mΩ@10V,32A 2 N-Channel TO-252-4 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.257 grams / 0.009065 oz |
| Package / Case | TO-252-4 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 32A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9mΩ@10V,32A |
| Power Dissipation (Pd) | - |
| Gate Threshold Voltage (Vgs(th)@Id) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 2 N-Channel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |