VBsemi Elec VBE5415 is a VBE5415 from VBsemi Elec, part of the MOSFETs. It is designed for 40V 50A 14mΩ@10V,38A 108W 1PCSNChannel+1PCSPChannel TO-252-4 MOSFETs ROHS. This product comes in a TO-252-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 50A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,38A
- Power Dissipation (Pd): 108W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA;30V@250uA
- Type: 1PCSNChannel+1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.4 grams.
More on VBE5415
Full Specifications of VBE5415
| Model Number | VBE5415 |
| Model Name | VBsemi Elec VBE5415 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 40V 50A 14mΩ@10V,38A 108W 1PCSNChannel+1PCSPChannel TO-252-4 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.400 grams / 0.084658 oz |
| Package / Case | TO-252-4 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 50A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 14mΩ@10V,38A |
| Power Dissipation (Pd) | 108W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA;30V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel+1PCSPChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |