VBFB1203M by VBsemi Elec – Specifications

VBsemi Elec VBFB1203M is a VBFB1203M from VBsemi Elec, part of the MOSFETs. It is designed for 200V 8A 270mΩ@10V,8A 96W 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 270mΩ@10V,8A
  • Power Dissipation (Pd): 96W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.587 grams.

More on VBFB1203M

Full Specifications of VBFB1203M

Model NumberVBFB1203M
Model NameVBsemi Elec VBFB1203M
CategoryMOSFETs
BrandVBsemi Elec
Description200V 8A 270mΩ@10V,8A 96W 4V@250uA 1PCSNChannel TO-251 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.587 grams / 0.020706 oz
Package / CaseTO-251
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)270mΩ@10V,8A
Power Dissipation (Pd)96W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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