VBsemi Elec VBFB2102M is a VBFB2102M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 12A 32.1W 215mΩ@10V,12A 2.5V@250uA 1PCSPChannel TO-251 MOSFETs ROHS. This product comes in a TO-251 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 12A
- Power Dissipation (Pd): 32.1W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 215mΩ@10V,12A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.637 grams.
More on VBFB2102M
Full Specifications of VBFB2102M
| Model Number | VBFB2102M |
| Model Name | VBsemi Elec VBFB2102M |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 12A 32.1W 215mΩ@10V,12A 2.5V@250uA 1PCSPChannel TO-251 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.637 grams / 0.02247 oz |
| Package / Case | TO-251 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 12A |
| Power Dissipation (Pd) | 32.1W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 215mΩ@10V,12A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSPChannel |