VBsemi Elec VBI1101M is a VBI1101M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1PCSNChannel SOT-89-3 MOSFETs ROHS. This product comes in a SOT-89-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 4.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@4.5V,1A
- Power Dissipation (Pd): 2.5W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.154 grams.
More on VBI1101M
Full Specifications of VBI1101M
| Model Number | VBI1101M |
| Model Name | VBsemi Elec VBI1101M |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 4.2A 125mΩ@4.5V,1A 2.5W 3V@250uA 1PCSNChannel SOT-89-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.154 grams / 0.005432 oz |
| Package / Case | SOT-89-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 4.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 125mΩ@4.5V,1A |
| Power Dissipation (Pd) | 2.5W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |