VBsemi Elec VBJ1101M is a VBJ1101M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 4.5A
- Power Dissipation (Pd): 1.7W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,6A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.13 grams.
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Full Specifications of VBJ1101M
| Model Number | VBJ1101M |
| Model Name | VBsemi Elec VBJ1101M |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 4.5A 1.7W 110mΩ@10V,6A 3V@250uA 1PCSNChannel SOT-223-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.130 grams / 0.075134 oz |
| Package / Case | SOT-223-3 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 4.5A |
| Power Dissipation (Pd) | 1.7W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 110mΩ@10V,6A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Type | 1PCSNChannel |