VBJ2102M by VBsemi Elec – Specifications

VBsemi Elec VBJ2102M is a VBJ2102M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 3A 6.5W 230mΩ@6V,2A 4V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS. This product comes in a SOT-223 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 6.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@6V,2A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.336 grams.

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Full Specifications of VBJ2102M

Model NumberVBJ2102M
Model NameVBsemi Elec VBJ2102M
CategoryMOSFETs
BrandVBsemi Elec
Description100V 3A 6.5W 230mΩ@6V,2A 4V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.336 grams / 0.011852 oz
Package / CaseSOT-223
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)6.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)230mΩ@6V,2A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSPChannel

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