VBsemi Elec VBL165R18 is a VBL165R18 from VBsemi Elec, part of the MOSFETs. It is designed for 650V 18A 208W 360mΩ@10V,11A 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 18A
- Power Dissipation (Pd): 208W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@10V,11A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.74 grams.
More on VBL165R18
Full Specifications of VBL165R18
| Model Number | VBL165R18 |
| Model Name | VBsemi Elec VBL165R18 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 650V 18A 208W 360mΩ@10V,11A 4V@250uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 3.740 grams / 0.131925 oz |
| Package / Case | TO-263 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 18A |
| Power Dissipation (Pd) | 208W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 360mΩ@10V,11A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |