VBM1101M by VBsemi Elec – Specifications

VBsemi Elec VBM1101M is a VBM1101M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 18A 92mΩ@10V,18A 105W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 92mΩ@10V,18A
  • Power Dissipation (Pd): 105W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.71 grams.

More on VBM1101M

Full Specifications of VBM1101M

Model NumberVBM1101M
Model NameVBsemi Elec VBM1101M
CategoryMOSFETs
BrandVBsemi Elec
Description100V 18A 92mΩ@10V,18A 105W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.710 grams / 0.095593 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)92mΩ@10V,18A
Power Dissipation (Pd)105W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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