VBM1102N by VBsemi Elec – Specifications

VBsemi Elec VBM1102N is a VBM1102N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 70A 18mΩ@10V,70A 355W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,70A
  • Power Dissipation (Pd): 355W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.86 grams.

More on VBM1102N

Full Specifications of VBM1102N

Model NumberVBM1102N
Model NameVBsemi Elec VBM1102N
CategoryMOSFETs
BrandVBsemi Elec
Description100V 70A 18mΩ@10V,70A 355W 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.860 grams / 0.100884 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)18mΩ@10V,70A
Power Dissipation (Pd)355W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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