VBM1104N by VBsemi Elec – Specifications

VBsemi Elec VBM1104N is a VBM1104N from VBsemi Elec, part of the MOSFETs. It is designed for 100V 45A 127W 32mΩ@10V,45A 3V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 45A
  • Power Dissipation (Pd): 127W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 32mΩ@10V,45A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.69 grams.

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Full Specifications of VBM1104N

Model NumberVBM1104N
Model NameVBsemi Elec VBM1104N
CategoryMOSFETs
BrandVBsemi Elec
Description100V 45A 127W 32mΩ@10V,45A 3V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.690 grams / 0.094887 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)45A
Power Dissipation (Pd)127W
Drain Source On Resistance (RDS(on)@Vgs,Id)32mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel

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