VBM1151N by VBsemi Elec – Specifications

VBsemi Elec VBM1151N is a VBM1151N from VBsemi Elec, part of the MOSFETs. It is designed for 150V 100A 375W 8.5mΩ@10V,100A 5V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 375W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.87 grams.

More on VBM1151N

Full Specifications of VBM1151N

Model NumberVBM1151N
Model NameVBsemi Elec VBM1151N
CategoryMOSFETs
BrandVBsemi Elec
Description150V 100A 375W 8.5mΩ@10V,100A 5V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.870 grams / 0.101236 oz
Package / CaseITO-220AB-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)375W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)5V@250uA
Type1PCSNChannel

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