VBsemi Elec VBM1158N is a VBM1158N from VBsemi Elec, part of the MOSFETs. It is designed for 150V 20A 107W 80mΩ@10V,12A 3.5V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 20A
- Power Dissipation (Pd): 107W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,12A
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.72 grams.
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Full Specifications of VBM1158N
| Model Number | VBM1158N |
| Model Name | VBsemi Elec VBM1158N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 150V 20A 107W 80mΩ@10V,12A 3.5V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.720 grams / 0.095945 oz |
| Package / Case | ITO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) | 20A |
| Power Dissipation (Pd) | 107W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 80mΩ@10V,12A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Type | 1PCSNChannel |