VBsemi Elec VBM1208N is a VBM1208N from VBsemi Elec, part of the MOSFETs. It is designed for 200V 40A 300W 60mΩ@10V,40A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 40A
- Power Dissipation (Pd): 300W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,40A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.69 grams.
More on VBM1208N
Full Specifications of VBM1208N
| Model Number | VBM1208N |
| Model Name | VBsemi Elec VBM1208N |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 200V 40A 300W 60mΩ@10V,40A 4V@250uA 1PCSNChannel ITO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.690 grams / 0.094887 oz |
| Package / Case | ITO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 40A |
| Power Dissipation (Pd) | 300W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@10V,40A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |