VBsemi Elec VBM2102M is a VBM2102M from VBsemi Elec, part of the MOSFETs. It is designed for 100V 18A 167mΩ@10V,18A 11.7W 2.5V@250uA 1PCSPChannel ITO-220AB-3 MOSFETs ROHS. This product comes in a ITO-220AB-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 167mΩ@10V,18A
- Power Dissipation (Pd): 11.7W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSPChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.66 grams.
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Full Specifications of VBM2102M
| Model Number | VBM2102M |
| Model Name | VBsemi Elec VBM2102M |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 100V 18A 167mΩ@10V,18A 11.7W 2.5V@250uA 1PCSPChannel ITO-220AB-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.660 grams / 0.093829 oz |
| Package / Case | ITO-220AB-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 18A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 167mΩ@10V,18A |
| Power Dissipation (Pd) | 11.7W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSPChannel |