VBsemi Elec VBMB165R10 is a VBMB165R10 from VBsemi Elec, part of the MOSFETs. It is designed for 650V 10A 900mΩ@10V,4A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 900mΩ@10V,4A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.34 grams.
More on VBMB165R10
Full Specifications of VBMB165R10
| Model Number | VBMB165R10 |
| Model Name | VBsemi Elec VBMB165R10 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 650V 10A 900mΩ@10V,4A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.340 grams / 0.082541 oz |
| Package / Case | TO-220F-3 |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 10A |
| Power Dissipation (Pd) | - |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 900mΩ@10V,4A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |