VBsemi Elec VBZM80N03 is a VBZM80N03 from VBsemi Elec, part of the MOSFETs. It is designed for 30V 120A 3mΩ@10V,28.8A 250W 2.5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3mΩ@10V,28.8A
- Power Dissipation (Pd): 250W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.65 grams.
More on VBZM80N03
Full Specifications of VBZM80N03
| Model Number | VBZM80N03 |
| Model Name | VBsemi Elec VBZM80N03 |
| Category | MOSFETs |
| Brand | VBsemi Elec |
| Description | 30V 120A 3mΩ@10V,28.8A 250W 2.5V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.650 grams / 0.093476 oz |
| Package / Case | TO-220AB |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 120A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3mΩ@10V,28.8A |
| Power Dissipation (Pd) | 250W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | - |
| Operating Temperature | - |