VBsemi Elec VBZMB8N60 is a VBZMB8N60 from VBsemi Elec, part of the MOSFETs. It is designed for 600V 8A 880mΩ@10V,8A 1PCSNChannel TO-220F-3 MOSFETs ROHS. This product comes in a TO-220F-3 package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 880mΩ@10V,8A
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.34 grams.
More on VBZMB8N60
Full Specifications of VBZMB8N60
Model Number | VBZMB8N60 |
Model Name | VBsemi Elec VBZMB8N60 |
Category | MOSFETs |
Brand | VBsemi Elec |
Description | 600V 8A 880mΩ@10V,8A 1PCSNChannel TO-220F-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 2.340 grams / 0.082541 oz |
Package / Case | TO-220F-3 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 8A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 880mΩ@10V,8A |
Power Dissipation (Pd) | - |
Gate Threshold Voltage (Vgs(th)@Id) | - |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | - |
Total Gate Charge (Qg@Vgs) | - |