2N7002E-T1-E3 by Vishay Intertech – Specifications

Vishay Intertech 2N7002E-T1-E3 is a 2N7002E-T1-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 240mA 3Ω@10V,250mA 350mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 240mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3Ω@10V,250mA
  • Power Dissipation (Pd): 350mW
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 21pF@5V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.035 grams.

More on 2N7002E-T1-E3

Full Specifications of 2N7002E-T1-E3

Model Number2N7002E-T1-E3
Model NameVishay Intertech 2N7002E-T1-E3
CategoryMOSFETs
BrandVishay Intertech
Description60V 240mA 3Ω@10V,250mA 350mW 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.035 grams / 0.001235 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)240mA
Drain Source On Resistance (RDS(on)@Vgs,Id)3Ω@10V,250mA
Power Dissipation (Pd)350mW
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)21pF@5V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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