IRF640SPBF by Vishay Intertech – Specifications

Vishay Intertech IRF640SPBF is a IRF640SPBF from Vishay Intertech, part of the MOSFETs. It is designed for 200V 18A 180mΩ@11A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS. This product comes in a D2PAK(TO-263) package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@11A,10V
  • Power Dissipation (Pd): 3.1W;130W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.3nF@25V
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.46 grams.

Full Specifications of IRF640SPBF

Model NumberIRF640SPBF
Model NameVishay Intertech IRF640SPBF
CategoryMOSFETs
BrandVishay Intertech
Description200V 18A 180mΩ@11A,10V 4V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.460 grams / 0.086774 oz
Package / CaseD2PAK(TO-263)
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)180mΩ@11A,10V
Power Dissipation (Pd)3.1W;130W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.3nF@25V
Total Gate Charge (Qg@Vgs)70nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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