Vishay Intertech IRFBE30LPBF is a IRFBE30LPBF from Vishay Intertech, part of the MOSFETs. It is designed for 800V 4.1A 3Ω@2.5A,10V 125W 4V@250uA 1PCSNChannel I2PAK MOSFETs ROHS. This product comes in a I2PAK package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 4.1A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3Ω@2.5A,10V
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.3nF@25V
- Total Gate Charge (Qg@Vgs): 78nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRFBE30LPBF
Full Specifications of IRFBE30LPBF
Model Number | IRFBE30LPBF |
Model Name | Vishay Intertech IRFBE30LPBF |
Category | MOSFETs |
Brand | Vishay Intertech |
Description | 800V 4.1A 3Ω@2.5A,10V 125W 4V@250uA 1PCSNChannel I2PAK MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | I2PAK |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 800V |
Continuous Drain Current (Id) | 4.1A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 3Ω@2.5A,10V |
Power Dissipation (Pd) | 125W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.3nF@25V |
Total Gate Charge (Qg@Vgs) | 78nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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