SI1012CR-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1012CR-T1-GE3 is a SI1012CR-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 630mA 396mΩ@600mA,4.5V 240mW 1V@250uA 1PCSNChannel SC-75A MOSFETs ROHS. This product comes in a SC-75A package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 630mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 396mΩ@600mA,4.5V
  • Power Dissipation (Pd): 240mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 43pF@10V
  • Total Gate Charge (Qg@Vgs): 2nC@8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.048 grams.

More on SI1012CR-T1-GE3

Full Specifications of SI1012CR-T1-GE3

Model NumberSI1012CR-T1-GE3
Model NameVishay Intertech SI1012CR-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 630mA 396mΩ@600mA,4.5V 240mW 1V@250uA 1PCSNChannel SC-75A MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.048 grams / 0.001693 oz
Package / CaseSC-75A
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)630mA
Drain Source On Resistance (RDS(on)@Vgs,Id)396mΩ@600mA,4.5V
Power Dissipation (Pd)240mW
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)43pF@10V
Total Gate Charge (Qg@Vgs)2nC@8V
Operating Temperature-55℃~+150℃@(Tj)

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