SI1012X-T1-GE3 by Vishay Intertech – Specifications

Vishay Intertech SI1012X-T1-GE3 is a SI1012X-T1-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 500mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 1PCSNChannel SC-89 MOSFETs ROHS. This product comes in a SC-89 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 500mA
  • Power Dissipation (Pd): 250mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 700mΩ@4.5V,600mA
  • Gate Threshold Voltage (Vgs(th)@Id): 900mV@250uA
  • Type: 1PCSNChannel
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.11 grams.

More on SI1012X-T1-GE3

Full Specifications of SI1012X-T1-GE3

Model NumberSI1012X-T1-GE3
Model NameVishay Intertech SI1012X-T1-GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 500mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 1PCSNChannel SC-89 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.110 grams / 0.00388 oz
Package / CaseSC-89
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)500mA
Power Dissipation (Pd)250mW
Drain Source On Resistance (RDS(on)@Vgs,Id)700mΩ@4.5V,600mA
Gate Threshold Voltage (Vgs(th)@Id)900mV@250uA
Type1PCSNChannel
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

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